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Self‐aligned normally‐off n++GaN/InAlN/AlN/GaN MOS HEMTs with a recessed gate show scalable threshold voltage between 1.3 to 3.7 V, which increases with the gate oxide thickness. Al2O3 or HfO2 gate insulators were grown by ALD at 100 °C so that one photoresist mask could be used for the gate recessing, ALD and metal lift‐off. A low density of the barrier surface donors ∼1 × 1013 cm−2 stems from the...
We present Electron Energy‐Loss Spectroscopy (EELS) studies of InxAl1‐xN MOVPE epilayers containing 16‐28 at% of indium. EELS investigations show a significant change of the plasmon energy (Ep) with the indium concentration. In the case of these compounds, the results have been compared for the first time with ab‐initio calculations performed with Wien2k and present a good agreement. Ep follows a...
This paper reports on microwave power results of InAlN/GaN HEMTs on silicon carbide substrate. It is shown a power density higher than 10W/mm up to 10GHz. Investigations based on diamond substrate or heat spreaders on top of the device to improve the thermal dissipation are also described.
The use of high quality diamond overlayers as heat sink has been studie d extensively in the past two decade s for high power devices. The outstanding diamond thermal conductivity would indeed enable to extract the extremely high power density of GaN-based devices, whose operation is often limited to pulse mode to prevent excessive device overheating.
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