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We demonstrated for the first time that novel Ni-FUSI process using FLA (Melt-FUSI) dramatically improved both electrical characteristics and cost-benefit performance of LSTP devices. Since the Tinv was aggressively scaled (Tinv = 2.1 nm) with keeping SiON-gate leakage current and increasing hole mobility twice, we achieved the record Ion of 300 muA/mum at the Ioff of 20 pA/mum for the pMOS transistor...
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