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Abstract MoON has been reported to be a good PMOS candidate. In this paper, we report tuning of the MoON PMOS metal towards Si conduction band-edge with Vtau as low as 0.35V for SiON capped with DyO, using a standard high temperature gate first process flow. Consistent shifts of 450 mV in VFB and Vtau are observed by capping SiON with DyO for MoON gate. Gate leakage as low as 10-7 A/cm2 at 17.6A EOT...
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