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This work describes the main challenges encountered for patterning crystalline silicon (c-Si) fins when we scaled down the fin pitch from 124 to 90nm on a 6T-SRAM cell. The target fins consist of straight structures (40nm height and 17nm of critical dimension) patterned on a 22nm node with 90nm fin pitch. The patterning stack consists of 70nm of amorphous carbon as a hard mask with 25nm of antireflective...
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