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Today, confident design of highly linear MMICs is of primary concern for high-frequency applications. Unfortunately, at high frequencies and low output powers, accurate prediction of intermodulation distortions fails with most of the available HEMT models due to nonlinearity extractions based on CW S-parameter measurements at DC bias points or low RF frequency measurements. In this paper, we propose...
A large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related trapping effects is proposed here. This nonlinear model is well formulated to preserve convergence capabilities and simulation times. Extensive measurements have demonstrated the impact of trapping effects on the shapes of I(V) characteristics, as well as load cycles. It is shown that accurate modeling of gate-and...
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