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In this paper, we present the simulation study of RF linearity of gate stacked Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET and compared it with the Insulated Shallow Extension (ISE) and silicon On Nothing (SON) MOSFET using ATLAS 3D device simulator. ISE architecture along with the SON MOSFET proves to be better candidate for suppression of Short Channel Effects (SCEs).
In this paper, the linearity performance of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET is investigated using ATLAS device simulator, based on the concept of intercept point. Further, the impact of various technological parameter variations, such as gate length (LG), negative junction depth (NJD), screening metal gate workfunction (PhiM2) and substrate doping (NA) on the...
RF circuit application requires transistors with low intermodulation distortion and thus, linearity analysis is desired to optimize device structure and circuit design. In this work, RF linearity of Dual Material Gate Insulated Shallow Extension Gate Stack (DMG ISEGaS) is investigated using ATLAS-2D: device simulation software and is compared with its Single Material Gate (SMG) counterpart. The work...
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