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InN is a material of huge potential in device applications. InN is grown on sapphire substrate. But due to the large lattice mismatch between the sapphire and InN, the large number of dislocations develops near the interface between the two materials. However, the density of threading dislocation falls sharply in the bulk layer. The charge density has also similar variation. So the bulk InN crystal...
GaN for its wide band gap has gained popularity for its use in semiconductor devices. To this date there have been no successful techniques devised for production of bulk GaN of technologically suitable size. The mostly closed lattice matched substrate of reasonable cost is sapphire. SiC is more closely matched but it is very costly. Due to lattice mismatch, large number of dislocations develop near...
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