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Reliability characteristics of TaAlOx high-k dielectric MIM capacitors are reported. TaAlOx films have been deposited by RF co-sputtering of Ta2O5 and Al2O3 targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have been achieved. Degradation kinetics in TaAlOx-based MIM capacitors have been studied under constant current stressing...
Advanced metal-insulator-metal capacitors with ultra thin (EOT-2.3-5.3 nm) RF sputter-deposited TaAlOx dielectric layers having excellent electrical properties have been fabricated. With low FCC value, the small change in quadratic VCC value in hysteresis curve is also found which shows a good stability of MIM capacitor. The Weibull distribution function, which is based on the weakest-link theory,...
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