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An analytical subthreshold surface potential model for Dual Material Gate MOSFET including the effect of inner fringing field is presented, considering surface potential variation with the depth of the channel depletion layer. A pseudo two dimensional method is adopted and a more accurate prediction of surface potential including the fringing field effect is reported.
The dielectric study of HfO2 thin films deposited on the platinized silicon substrate using RF-sputtering deposition technique have been carried out in the metal-insulator-metal (MIM) configuration over a wide temperature (300 to 500 K) and frequency (100 Hz to 1 MHZ) ranges. The film were deposited at pre-optimized sputtering voltage of 0.8 kV, substrate bias of 80 volt and annealing temperature...
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