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Interfacial reactions and electrical properties of RF sputter deposited HfTaO x high-k gate dielectric films on Si 1−x Ge x (x=19%) are investigated. X-ray photoelectron spectroscopic analyses indicate an interfacial layer containing GeO x , Hf silicate, SiO x (layer of Hf–Si–Ge–O) formation during deposition of HfTaO x . No evidence of Ta-silicate or...
Ultra thin HfAlO x high-k gate dielectric has been deposited directly on Si 1−x Ge x by RF sputter deposition. The interfacial chemical structure and energy-band discontinuities were studied by using X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and electrical measurements. It is found that the sputtered deposited HfAlO...
Rapid thermal oxidation (RTO) of heteroepitaxial thin Si1-xGex layers (x=0.85) at 815??C in dry O2 has been studied. We have investigated the origin of interface defects in Si0.15Ge0.85/SiGeO2 RTO oxides by electron paramagnetic resonance (EPR) through internal photoemission (IPE) technique. Spin concentration of the paramagnetic defect centers have been determined from EPR results. After IPE capacitance-voltage...
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