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Tellurium doped In0.53Ga0.47As epitaxial layers have been grown by LPE in the range n=1018?4?1019 cm?3; the distribution coefficient of tellurium was found to be 0.1. These layers exhibit a two to three times higher mobility than InP or GaAs doped to the same level. Theoretically calculated values of mobility taking account of the degenerate and nonparabolic conduction band conditions are compared...
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