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AlGaN/GaN HEMTs are tremendous interest in applications requiring high power at microwave frequencies. In the context of studying the reliability of RF High Power Amplifiers (HPA) in their real environment, a study of the effect of electromagnetic stress on AlGaN / GaN HEMTs performances is presented in this paper. The near field setup is used to disturb with electromagnetic field the device under...
A completely automatic near-field mapping system has been developed within the Research Institute for Electronic Embedded Systems (IRSEEM) in order to determine the electromagnetic field created by electronic systems and components. This test bench uses a 3-D positioning system of the probe to make accurate measurements. This paper presents some applications of the near-field techniques in EMC investigations...
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