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Aluminium-induced crystallization of amorphous silicon (a-Si) in Al/a-Si and a-Si/Al bilayers was studied upon annealing at low temperatures between 165 and 250°C, by X-ray diffraction (XRD) and Auger electron spectroscopy (AES). Upon annealing the inward diffusion of Si along grain boundaries in Al takes place, followed by crystallization of this diffused Si. Continuous annealing leads to (more or...
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