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A second-generation three-dimensional stacked capacitor cell has been developed. This cell has two significant features. One is that the three-dimensional feature of the storage capacitor has been considerably enhanced by means of a fine structure. The other is that bit lines have been formed before storage capacitor formation. Either of these features will lead to the realization of 16 M DRAMs (dynamic...
The authors report on the improvement of the hot-carrier instability of MOSFETs by putting a plasma silicon oxide (P-SiO) of specific composition between the MOSFETs and the plasma silicon nitride (P-SiN) passivation layer. The P-SiO was found to have the capability of completely blocking hydrogen diffusion and water penetration. The hydrogen-blocking effect is attributed to hydrogen trapping by the...
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