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Strain and confinement leads to reduction in m* to numbers comparable with electron mass in III-V's. Room temperature mobility of 960/860cm2/Vs for In0.41Ga0.59Sb/GaSb channels (NS=1??1012/cm2) are the highest reported for these materials. ??h is > 3X compared to uniaxially strained Si. Further enhancement should be possible using uniaxial strain (Fig. 3). High ??h Sb-based channels along with...
Density-gradient theory is discussed as a tool for modeling Sb-based p-channel FETs. The theory's methods and approximations are reviewed with emphasis given to the phenomenological treatment of the quantum confinement. The theory is then illustrated by using it to analyze FETs having InSb, GaSb and InGaSb channels, and to project their scaling characteristics.
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