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The reversibility of the gate dielectric breakdown (BD) in MOSFETs with ultra-thin hafnium based high-k dielectric has been analyzed. BD recovery allows different conductivity states in the dielectric. The dependence of the characteristics of these conduction states with the device area and with the location of the conductive path along the channel is analyzed. Finally, the impact of the BD recovery...
The gate dielectric breakdown (BD) reversibility in MOSFETs with ultra-thin hafnium based high-k dielectric is studied. The phenomenology is analyzed in detail and the similarities with the resistive switching phenomenon emphasized. The results suggest that the conductive path in the dielectric after BD can be `opened' and `closed' many times and that the BD recovery partially restores not only the...
The reversibility of the gate dielectric breakdown (DB) in ultrathin high-k dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery.
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