The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report on recent monolithically integrated III-V on Si device developments including a room-temperature, superluminescent light emitting diode. The integration scheme is enabled by spontaneously-formed, interfacial misfit arrays (IMF).
We report a GaSb/AlGaSb multi-quantum well diode laser emitting at 1550 nm at 77 K. The laser is grown directly on a GaAs substrate using interfacial misfit (IMF) arrays rather than thick metamorphic buffer layers.
A GaSb quantum-well (QW) laser diode grown monolithically on a 5deg miscut Si (001) substrate is presented. The III-Sb epi-structure is grown monolithically on the miscut Si substrate via a thin (50 nm) AlSb nucleation layer. The 13% lattice mismatch between AlSb and Si is accommodated by a self-assembled 2D array of interfacial misfit dislocations (IMF). The 5deg miscut geometry enables simultaneous...
We demonstrate a monolithic, hybrid GaSb/GaAs diode emitting at 1.6 mum. The LED is comprised of a GaSb active region embedded within GaAs/AlGaAs DBRs using two interfacial misfit arrays. Growth, fabrication and characterization are discussed
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.