The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The system power amplifier's linearity sets the maximum bit rate and the efficiency determines the maximum output power possible given a fixed heat dissipation or DC supply. This paper demonstrates that using a GaAs PHEMT 0.15μm gate process, industry leading performance can be attained. Shown is a 15GHz linear power amplifier capable of - 52dBc IM3 at 21dBm output power (+47dBm OIP3). Also demonstrated...
An optical photo lithography based 0.15 mum GaAs PHEMT process and 2mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax=575 mA/mm, BVgd=14 V, and 753 mW/mm of output power density at P-1 condition at 18 GHz. Design and test results for balanced and single-ended power amplifiers (PA) for 40 to 85 GHz applications are described...
While most Point-to-Point radio systems migrate to SMT (Surface Mount Technology) over chip-and-wire, the 38 GHz band has provided the largest challenge. This paper demonstrates a commercially viable complete SMT solution to receive LNA-down-converter and transmit up-converter, VGA, power amp and directional power detector. The receive chain provides 10 dB conversion gain with 4.5 dB NF. The transmit...
Development of enhancement mode PHEMT (E-PHEMT), single supply, 13 to 17GHz power amplifier MMIC is described. The amplifier was designed with highly integrated lumped-passive based design techniques utilizing a 0.25mum GaAs E-PHEMT production process. The designed power amplifier exhibit 30 dB of small signal gain, 31dBm 1dB gain compression output power with 31% PAE at 16 GHz. This MMIC was fabricated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.