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Carbon nitride films were prepared on Si(100) wafers by alternating irradiation with mass-separated ion beams of C + and N + at the ultra-high vacuum pressure 10 -7 Pa. The ion energy of both ion species was 50 eV. The Si substrate was kept at room temperature (rt), 460, 800 or 1130 K during deposition, and the effects of the substrate temperature on the film structure...
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