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A combination of hot-wire chemical vapor deposition (HWCVD) and RF plasma, referred to as plasma-assisted HWCVD (P-HWCVD) was used to prepare poly-crystalline silicon (poly-Si) thin films. The effects of the plasma on the film properties were studied by varying the RF power (P w ) from 0 to 40 W. The results indicate that, compared with that of HWCVD samples, the film crystalline fraction...
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