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A combined two-bit phase-shifter and two-stage, 27-dBm power amplifier has been designed for Ka-band applications. The integration of these functions allows compact assemblies with low inter-stage losses to be realised while the use of a commercial 6-inch foundry reduces cost. High density applications are made more practicable through the high PAE achieved (40 to 45%), thus easing the heat management...
A 6.5 watt power amplifier MMIC has been developed for the 35 GHz band. The amplifier exhibits high performance at low processing cost through the use of a commercially available 6-inch, 0.15-mum pHEMT process with 100 mum thick substrate. The balanced four stage amplifier MMIC has 23 dB of gain, 6.5 watts saturated output power (38.1 dBm) with high absorption load for driving into a mismatch, and...
A 3.5 watt, 35 GHz power amplifier MMIC has been developed. The amplifier exhibits high performance at low processing cost, through the use of a commercially available 6-inch, 0.15-μm pHEMT process with 100 μm thick substrate. The single-ended four stage amplifier MMIC has 22 dB of gain at 35 GHz, 3.5 watts saturated output power (35.5 dBm), and power added efficiency of more than 25%, within a chip...
The performance of a compact 38-GHz linear power amplifier MMIC' designed for use in SMD package is presented. The amplifier is fabricated with a 6-inch 0.15 mum GaAs low-noise PHEMT technology, and features on-chip ESD protection with input short-circuit stub, robust capacitors at RF ports and high current diode arrays. While occupying a chip area of only 3.5 mm2 , at 5 V and 600 mA, this 4-stage...
This paper presents the performance of a 0.5-Watt Ku-band power amplifier MMIC in low cost surface mount quad flat non-leaded packages (QFN). Depending on the technology used (molded or air-cavity QFN packages), the packaged 2-stage amplifier exhibits high-gain ranging from 18- to 20 dB at Ku-band, with more than 27-dBm (500-mW) CW output power, and up to 29-dBm in saturation (800 mW) at 13.75-14...
A family of robust and cost effective 44-GHz microstrip MMIC power amplifiers has been developed based on a standard 6-inch, 0.15-mum GaAs power pHEMT production process on 100-mum substrate thickness. These amplifiers provide high output powers at 44-GHz with a MTTF exceeding two million hours at 75degC backplate temperature. The single-ended, 3-stage amplifier MMIC has more than 15 dB small signal...
The performance of a compact K-band power amplifier MMIC fabricated in standard 6-inch 0.15-mum GaAs power PHEMT technology is reported. The circuit features on-chip ESD protection including input short-circuit stub, dual capacitors at RF ports and high-current diode arrays on each gate pad. Occupying less than 3 mm2, this 3-stage power amplifier achieves a linear gain of more than 20 dB over the...
A family of robust and cost effective 44-GHz microstrip MMIC power amplifiers has been developed based on a standard 6-inch, 0.15-μm GaAs power pHEMT production process on 100-μm substrate thickness. These amplifiers provide high output powers at 44-GHz with a MTTF exceeding two million hours at 75 °C backplate temperature. The single-ended, 3-stage amplifier MMIC has more than 15 dB small signal...
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