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The performance of a compact K-band power amplifier MMIC fabricated in standard 6-inch 0.15-mum GaAs power PHEMT technology is reported. The circuit features on-chip ESD protection including input short-circuit stub, dual capacitors at RF ports and high-current diode arrays on each gate pad. Occupying less than 3 mm2, this 3-stage power amplifier achieves a linear gain of more than 20-dB over the...
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