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Aluminum oxide (Al 2 O 3 ) thin films were deposited on silicon (100) and quartz substrates by pulsed laser deposition (PLD) at an optimized oxygen partial pressure of 3.0×10 −3 mbar in the substrate temperatures range 300–973K. The films were characterized by X-ray diffraction, transmission electron microscopy, atomic force microscopy, spectroscopic ellipsometry, UV–visible...
Preparation of γ-alumina thin films by pulsed laser deposition from a sintered α-alumina target is investigated. The films were deposited on (100) silicon substrates at 973K with varying oxygen partial pressures in the range 2.0×10 −5 –3.5×10 −1 mbar. X-ray diffraction results indicated that the films were polycrystalline γ-Al 2 O 3 with cubic structure. The films...
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