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A boost converter was constructed using a high voltage enhancement mode (E-mode) AlGaN/GaN/AlGaN DHFET transistor grown on Si<;111>. The very low dynamic onresistance (Rdyn ≈ 0.23 Ω) and very low gate-charges (e.g. Qgate ~15 nC at Vos = 200 V) result in minor transistor losses. Together with a proper design of the passive components and the use of SiC diodes, very high overall efficiencies are...
Wide-bandgap (WBG) semiconductors, such as gallium nitride (GaN), are more and more being used in switching power devices. An AlGaN/GaN/AlGaN Double Heterojunction Field Effect transistor (DHFET) was developed in previous work and needed to be tested. The used test circuit was a buck converter. This type of converter, in addition with the normally-on switching behaviour of the GaN-based transistors,...
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