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Silicon carbide (SiC) separate absorption multiplication region avalanche photodiodes (SAM-APDs) for UV detection in harsh environment applications were designed and fabricated. The devices were intentionally designed to operate under nonreach-through conditions in order to eliminate field-induced leakage current. The gain of 2500 and quantum efficiency of ~45% at room temperature were achieved at...
We designed and fabricated silicon carbide (SiC) separate absorption multiplication region avalanche photodiodes (SAM-APDs) for UV detection in harsh environment applications. Two variations of device types were compared. Type I was designed to achieve reach-through (i.e. multiplication, charge, and absorption layers are depleted) prior to reaching high gain while Type II was designed not to achieve...
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