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An influence of annealing temperatures (300, 400 and 500°C) on the iridium silicide formation in the Ir/Si structure was analysed by means of the transmission electron microscopy (TEM). The silicide layer is formed by the solid-state reaction between 15 nm thick Ir metallisation and a Si layer during the rapid-thermal-annealing (RTA) process for 120 s. The silicide layers are used as source/drain...
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