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In this paper is reported for the first time a rigorous physically based ion implantation damage model which successfully predicts both the as-implanted impurity profiles (SIMS) and the damage profiles (RBS) for a wide range of implant conditions for arsenic, boron and BF/sub 2/ implants. In addition, the amorphous layer thicknesses predicted by this new damage model for high dose implants are also...
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