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In this work, the behavior of strained triple-gate devices with arbitrary channel orientation is studied in terms of electron density as well as transport properties. We show that they can be improved for orientations different from the usual h100i, i.e., combining channel orientation and strain, these devices could double the electron mobility of standard CMOS devices for the same inversion charge...
A variety of techniques can be employed to increase the drive current in CMOS transistors. In this paper, we study the effects of using different wafer orientations and strain methods in surrounding gate transistors. Specifically, we focus on quantum electron density and mobility. A significant modification of both magnitudes is to be expected, due to the changes caused in the effective mass tensor...
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