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This paper investigates the electrical properties of metal-insulator-semiconductor (MIS) by varying the thickness of the semiconductor layer. The MIS device was fabricated using ZnO and PMMA: TiO2 nanocomposite as semiconductor and dielectric layer, respectively. Different thickness of ZnO films was obtained by varying the deposition speed from 500 to 3000 rpm. The electrical properties of MIS showed...
PMMA/TiO2 nanocomposite films in free standing form were prepared at different amount of TiO2 nanoparticles by using sonication method. The PMMA powder and TiO2 nanopowder were dissolved into the toluene solution and sonicated for 1 h to confirm the homogeneity of the mixture. The FESEM micrographs reveal that PMMA/TiO2 nanocomposite contain 4 wt% TiO2 nanoparticles can produced the homogenous mixture...
The morphology of PVDF-TrFE (70/30) thin film at various annealing temperature were investigated using non-contact mode Atomic Force Microscopy (AFM). Differential Scanning Calorimetry (DSC) technique was used to obtain TC, Tm, and TCrys of PVDF-TrFE. The prepared spin coated PVDF-TrFE (70/30) thin films were annealed at TC (113°C), Tm (154°C), TCrys (135°C) and Tc at cooling (55°C) in accordance...
Microporous vanadosilicate AM-6 has been hydrothermally synthesized for the first time in the absence of titanosilicate ETS-10 seeds. High purity (95–100% AM-6) products were crystallized under static conditions at 430–503K using tetramethylammonium hydroxide (TMAOH) or tetramethylammonium bromide (TMABr) as a structure-directing agent in mixtures with molar compositions xNa 2 O:1.3K 2...
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