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This paper investigates the electrical properties of metal-insulator-semiconductor (MIS) by varying the thickness of the semiconductor layer. The MIS device was fabricated using ZnO and PMMA: TiO2 nanocomposite as semiconductor and dielectric layer, respectively. Different thickness of ZnO films was obtained by varying the deposition speed from 500 to 3000 rpm. The electrical properties of MIS showed...
This paper investigated the effect of dielectric thickness to the electrical properties metal-insulator-semiconductor (MIS) device. The MIS device were fabricated having PMMA:TiO2 and ZnO as dielectric and semiconductor layer, respectively. The PMMA:TiO2 nancomposite dielectric film were deposited at different deposition speed from 1000, 2000, 3000, 4000, 5000, 6000 rpm. Results showed that there...
The electrical, dielectric and structural properties of multilayer ZnO/MgO films prepared by simple chemical deposition technique were investigated using I-V measurement, impedance spectroscopy analyzer and field emission scanning electron microscope (FESEM). From the observation, it shows that the annealing temperature influence the electrical, dielectric and structural properties of ZnO/MgO multilayer...
A practical horn antenna feeding configuration for use at Ka-band frequencies is proposed. It is consists of five circular identical cylindrical parasitic dielectric resonator (DR) fed by a microstrip feedline through a coupling rectangular slot in the ground plane between them. It is designed to parasitic type for high gain, high isolation and wideband characteristics. The bandwidth enhancement is...
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