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This paper investigates the electrical properties of metal-insulator-semiconductor (MIS) by varying the thickness of the semiconductor layer. The MIS device was fabricated using ZnO and PMMA: TiO2 nanocomposite as semiconductor and dielectric layer, respectively. Different thickness of ZnO films was obtained by varying the deposition speed from 500 to 3000 rpm. The electrical properties of MIS showed...
This paper investigated the effect of dielectric thickness to the electrical properties metal-insulator-semiconductor (MIS) device. The MIS device were fabricated having PMMA:TiO2 and ZnO as dielectric and semiconductor layer, respectively. The PMMA:TiO2 nancomposite dielectric film were deposited at different deposition speed from 1000, 2000, 3000, 4000, 5000, 6000 rpm. Results showed that there...
We have successfully deposit the a-C and nitrogen doped a-C (a-C:N) using the custom-made Aerosol-assisted CVD (AACVD). Natural precursor, camphor oil (C10H16O) was selected as the carbon source. The electrical and optical properties were characterized by BUKOH KEIKI CEP2000 solar simulator system and Perkin Elmer LAMBDA 750 UV-vis-NIR spectroscope respectively. Five samples were prepared for the...
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