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This paper investigated the effect of dielectric thickness to the electrical properties metal-insulator-semiconductor (MIS) device. The MIS device were fabricated having PMMA:TiO2 and ZnO as dielectric and semiconductor layer, respectively. The PMMA:TiO2 nancomposite dielectric film were deposited at different deposition speed from 1000, 2000, 3000, 4000, 5000, 6000 rpm. Results showed that there...
Physical properties such as high melting point, low heat capacity and high bonding strength of magnesium oxide, MgO could be get give an advantage to MgO to be used as the dielectric layer. Besides that, MgO also has large band gap (7.8 eV) and high dielectric constant (9.8) could be potentially used as a buffer layer for ferroelectric material. In this work, MgO with 0.2M concentration were prepared...
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