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Based on a novel, “spoked-ring” active microcavity, we demonstrate optical modulators in an unmodified 45nm SOI CMOS process at 5Gbps with <5fJ/bit energy consumption; and filters with record thermal tuning efficiency of 2µW/GHz.
A scalable polymer backplane for dense integration of photonics with lab-on-a-chip systems is presented. A high-throughput cell culture chip employing waveguides for monitoring and control of culture conditions is used to illustrate integration options.
We demonstrate the first photonic chip designed for a commercial bulk CMOS process (65 nm-node) using standard process layers combined with post-processing, enabling dense photonic integration with high-performance microprocessor electronics.
Thermal tuning with an efficiency of 40μW/GHz/ring is demonstrated in silicon-rich silicon nitride second-order microring resonators. Open-loop thermal stability of the resonant frequency is measured to be within 400MHz for these resonators.
The modulation properties of incoherently injection locked Fabry-Perot laser diodes are studied. It is found that the incoherent injection increases the SMSR, but reduces the bandwidth.
We demonstrate the first photonic chip designed in a commercial bulk CMOS process (65 nm node) using standard process layers combined with scalable post-processing, enabling dense photonic integration with high-performance microprocessor electronics.
Thermal tuning with an efficiency of 40 muW/GHz/ring is demonstrated in silicon-rich silicon nitride second-order microring resonators. Open-loop thermal stability of the resonant frequency is measured to be within 400 MHz for these resonators.
The optical spectrum and modulation response of wavelength-locked lasers are analyzed. The model is verified against WDM-PON system data. A maximum data rate resulting from a trade-off of chromatic dispersion and modulation damping is predicted.
A novel post-processing fabrication technique, based on XeF2 etching, has been developed to locally remove the silicon substrate beneath polysilicon waveguides, enabling integration of low-loss strong-confinement microphotonics into standard bulk-silicon CMOS process flows.
Thermal tuning for high-index-contrast silicon nitride second-order ring filter with low tuning power of 52 muW/GHz is analyzed. Efficient tuning of 4.5 GHz/K is demonstrated for these filters. Precise centre wavelength stability of approximately 100 MHz is obtained with temperature feedback controller. Their compact size, large free spectral range, low tuning power and low thermal crosstalk between...
An integrated waveguide isolator design in InGaAsP/lnP is proposed which achieves a maximum isolation greater than 40 dB and maintains 25 dB of isolation over the C-band.
Spatially-resolved photoresponse and bias-dependent modulation measurements of large area vertically-illuminated germanium photodiodes are presented. These measurements are compared with finite-element device simulations to theorize possible sources of performance limitations revealed by different measurement conditions.
Fluorescence detection with dense sensor arrays is realized in a multilayer large core polymer waveguide optical backplane. The multilayer backplane employs optical vias combined with frequency domain multiplexing to facilitate 4:1 multiplexing in the readout.
Spatially-resolved photoresponse and modulation measurements of vertically- illuminated germanium-on-silicon photodiodes are presented. It is shown that, even in a planar device, localized traps at the perimeter limit both quantum efficiency and modulation bandwidth.
Efficient thermal tuning of 36 pm/K and 60 muW/GHz is shown for high-index-contrast silicon nitride second-order filters. Their compact size, large free-spectral range, low tuning power, and silicon compatibility make these resonators attractive for photonic integration.
We demonstrate the use of amplified spontaneous emission in thermoreflectance imaging of photonic integrated circuits for fiber-free characterization of the integrated cascaded semiconductor optical amplifiers.
The limits of isolation and bandwidth for existing waveguide isolators in InP are analyzed. A new integrated waveguide isolator design is proposed which achieves an isolation greater than 38 dB and a loss of 1.4 dB.
A novel heterojunction thermophotovoltaic device, converting infrared radiation to electricity, has been demonstrated with a room-temperature open-circuit voltage of 360 mV, the highest demonstrated for a 0.54-eV-bandgap device.
Waveguide Faraday rotation is demonstrated for the first time in Fe:InP/Fe:InGaAsP. The measured Verdet coefficient is 33.3deg/mm/T, which is only four times smaller than the Verdet coefficient of YIG.
Multimode polymer waveguides and out-of-plane bends are fabricated to create a waveguide sensor array capable of excitation and detection of fluorescence based sensors.
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