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The ESD performance of gated FinFET diodes and multi-gate NMOS devices in both active MOS-diode and parasitic-bipolar mode are investigated, highlighting the impact of strained SiN layers. Strain improves the ESD robustness up to 30% in multi-fin FinFETs. A different failure mechanism is discovered in strained NMOS FinFETs for the parasitic-bipolar mode.
The electro-static discharge robustness of different elevated source drain architectures on a 90 nm CMOS technology is investigated. The study is performed on poly isolated diodes and grounded gate NMOS using transmission line pulse and human body model testing methods. It is found that an improvement up to 45% in ESD robustness can be obtained by the use of elevated source drain process option. Failure...
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