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We report two novel solutions to the n-Ge contacting problem achieving, for the first time a dramatic improvement in contact resistivity (typically >;10-4 Ωcm2 [1-2]) to record low values <;2 × 10-6 Ωcm2. Our first solution introduces millisecond laser annealing in combination to NiGe snow-plow (to enhance active dopants at the interface), and the second uses doped epi-Si-passivation layers...
Vt-mismatch, and thus SRAM scalability, is greatly improved in narrow SOI FinFETs, with respect to planar bulk, because of their undoped channel and near-ideal gate control. We show by simulations and by measurements that in FinFETs, unlike planar bulk, beta-mismatch becomes dominant, leading to radically different SRAM characteristics. By careful process tuning, we demonstrate a substantial reduction...
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