The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We present a prototype chip built in a 40 nm CMOS process for readout of a pixel detector. The prototype chip has a matrix of 18×24 pixels with a pixel pitch of 100 µm. It can operate in both: the single photon counting (SPC) mode and the C8P1 mode. In the SPC mode using the high gain setting the measured ENC is 84 e− rms (for the peaking time of 48 ns), the gain is 79.7 µV/e−, while the effective...
Hybrid pixel detectors are becoming a standard in modern fast X-ray imaging for material science, physics and medicine. However, charge sharing effect is the main limitation in increasing position resolution of these systems and also for using them for spectroscopy applications. In this paper we present novel algorithms which allow proper hit allocation even in the case of charge sharing and which...
Presents a collection of slides covering the following topics: 3D IC multiproject fabrication; high energy physics; circuit bonding; wafer thinning; TSV; radiation detector; CMOS; wafer bonding; and SOI process.
This paper reports on the current status of the development of International Linear Collider vertex detector pixel readout chips based on multi-tier vertically integrated electronics. Initial testing results of the VIP2a prototype are presented. The chip is the second embodiment of the prototype data-pushed readout concept developed at Fermilab. The device was fabricated in the MIT-LL 0.15 μm fully...
This paper reports on a SOI detector with drift field induced by the flow of majority carriers. It is proposed as an alternative method of detector biasing compared to standard depletion. N-drift rings in n-substrate are used at the front side of the detector to provide charge collecting field in depth as well as to improve the lateral charge collection. The concept was verified on a 2.5 ×2.5mm2 large...
The exploration of the vertically integrated circuits, also commonly known as 3D-IC technology, for applications in radiation detection started at Fermilab in 2006. This paper examines the opportunities that vertical integration offers by looking at various 3D designs that have been completed by Fermilab. The emphasis is on opportunities that are presented by through silicon vias (TSV), wafer and...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.