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We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier confinement are needed. In this letter, the N-face of a Ga-face AlGaN/GaN epilayer grown on Si (111) is exposed by removing the Si substrate. To provide mechanical support, prior...
In this paper, we present a new method to fabricate N-face GaN/AlGaN HEMTs based on the substrate removal of a Ga-face AlGaN/GaN layer grown on Si. A new substrate removal and transfer technology with no degradation to the GaN active layer. This technology has allowed the fabrication of N-face GaN transistors with record sheet resistance values. The Ga-face surface was bonded to a Si carrier wafer...
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