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SiGe heterojunction bipolar transistors (HBTs) with very thin n+ hydrogenated amorphous Si (α-Si:H) emitters and various doping and Ge distribution profiles in the bases are reported. An analytical model defining the leverage of the structures in terms of current gain and high Early voltage is presented and verified experimentally. Devices having a base doping concentration of 1??1019cm-3, a base...
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