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GaAsSb-GaAsN-based type-II dasiaWpsila structures have been studied for mid-IR (1.3-1.6mum) emission. Post growth annealing increases the photoluminescence (PL) intensity of the structures. Temperature dependent PL show a charge localization effect due to presence of nitrogen.
The introduction of defects during the growth of large lattice mismatched III-V materials typically occurs through the injection of 60deg dislocations from the surface of the film or islands once a critical thickness or size has been reached. The threading segments from these dislocations lead to electrically active states which deteriorate device performance. Strain relaxation at the earliest stages...
To realize the theoretical advantages of Quantum Dots (QDs) as the active region for diode lasers, the selective growth of QDs on patterned substrates were investigated. The substrate nanopatterning and QD formation was realized by diblock copolymers combined with selective MOCVD growth. Using a CF4 reactive ion etch (RIE) and a sacrificial SiNx mask, diblock copolymer nanopattern was transferred...
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