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The design and performance of a 28-51 GHz dynamic frequency divider based on pseudomorphic Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with 0.15 mu m mushroom-shaped gates are presented. The circuit has a power consumption of approximately 440 mW and a chip area of approximately 200*220 mu m/sup 2/.<<ETX>>
Pseudomorphic MODFET three-stage MMIC amplifiers were designed and fabricated which cover the 76-77 GHz band allocated for automotive applications in Europe. The MMICs in coplanar technology have a gain of 27 dB at 70 GHz and 21 dB at 77 GHz. To the authors' knowledge, this is the highest gain reported for any MMIC amplifier above 40 GHz for both GaAs- and InP-based circuits.<<ETX>>
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