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An integrated laser diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs/GaAs quantum well high electron mobility transistors (QW-HEMTs) with a gate length of 0.3 μm has been developed. Its large signal bandwidth was 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gbit/s showed an opening like that of the input signal. Increasing the bit rate of the input signal by...
A 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5 ??m recessed-gate AlGaAs/GaAs HEMTs. A -3dB bandwidth of 11.3 GHz has been achieved.
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