The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The power performance of 0.25- mu m*8-mm double recessed GaAs-based pseudomorphic high electron mobility transistors (PHEMTs) at 4 GHz is reported. The 0.25- mu m-gate-length PHEMTs exhibit typical gate-to-drain breakdown voltage of more than 20 V, peak transconductance of 430 mS/mm, and maximum drain current density of 450 mA/mm. When the drain was biased up to 11 V, the device delivered 5.7-W output...
The relative importance of f/sub t/ and f/sub max/ in millimeter-wave evaluation is discussed. Also presented is a study of the variation of C/sub gs/ (input capacitance), C/sub gd/ (gate-drain feedback capacitance), g/sub m/ (peak transconductance), and g/sub o/ (output conductance) with the distance, L/sub gd/, between the metal edge and the n/sup +/ cap layer on the drain side of the device in...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.