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The power performance of 0.25- mu m*8-mm double recessed GaAs-based pseudomorphic high electron mobility transistors (PHEMTs) at 4 GHz is reported. The 0.25- mu m-gate-length PHEMTs exhibit typical gate-to-drain breakdown voltage of more than 20 V, peak transconductance of 430 mS/mm, and maximum drain current density of 450 mA/mm. When the drain was biased up to 11 V, the device delivered 5.7-W output...
A monolithic three-stage pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) low-noise amplifier is discussed. The amplifier exhibits state-of-the-art low noise and gain performance at Q-band frequencies. It exhibits 22 dB of gain with 3-dB noise figure from 41 to 45 GHz. From 35 to 50 GHz, it has a flat gain response of over 22 dB gain across the Q-band range. The amplifier uses 0.15- mu...
The relative importance of f/sub t/ and f/sub max/ in millimeter-wave evaluation is discussed. Also presented is a study of the variation of C/sub gs/ (input capacitance), C/sub gd/ (gate-drain feedback capacitance), g/sub m/ (peak transconductance), and g/sub o/ (output conductance) with the distance, L/sub gd/, between the metal edge and the n/sup +/ cap layer on the drain side of the device in...
High-performance InAlAs/InGaAs planar-doped HEMTs (high-electron-mobility transistors) lattice-matched to InP have been fabricated with a 0.25- mu m T-gate. A maximum extrinsic transconductance g/sub m/ of 900 mS/mm, corresponding to an intrinsic g/sub m/ of 1640 mS/mm, was obtained at room temperature. RF measurements at 18 GHz yielded a minimum noise figure of 0.5 dB with an associated gain of 15...
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