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In this study, 30x30 mm 2 free-standing GaN substrates were fabricated from 400-450 μm thick GaN films grown on (0001) sapphire by hydride vapor phase epitaxy (HVPE). The thick films were separated from the substrate by mechanical polishing liftoff method, using a diamond slurry. After liftoff, the bow is only slight or absent in the resulting free-standing GaN wafers.
In this study, we report the results of comparison of GaN film properties grown on bare sapphire and on MOCVD GaN epi-layer. Comparing with properties of two GaN films, we used double crystal X-ray diffraction (DCXRD), scanning electron microscopy and cathodoluminescence (CL) spectroscopy and imaging techniques. As a result of these measurements, we found that GaN films grown on MOCVD GaN epi-layer...
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