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The authors report for the first time on epitaxially grown fully processed MESFETs lifted off from the GaAs substrate and deposited on glass as a new host material. The layer thickness of the epitaxial film was 0.5 mu m. Very good device performance was obtained with g/sub m/ values of 155 mS/mm. This opens interesting possibilities for hybrid or monolithic integration of III-V technology with other...
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