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Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C 60 layer epitaxial growth on GaAs (111)B and (111)A substrates. The frequency of the oscillation coincides well with growth rate of C 60 layers, suggesting that C 60 layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual...
We demonstrate area-selective epitaxy by migration-enhanced epitaxy with As 2 and As 4 as arsenic sources. The distinct whisker structure growing in [111]B direction is obtained when employing As 2 as an arsenic source, while (111)B facet is formed with As 4 . The difference in the facet formation can be explained by the formation of As-trimer, which significantly reduces...
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