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BaTi4O9 thin films were grown on a Pt/Ti/SiO2/Si substrate using RF magnetron sputtering. A homogeneous BaTi4O9 crystalline phase developed in the films deposited at 550∘C and annealed above 850∘C. When the thickness of the film was reduced, the capacitance density and leakage current density increased. Furthermore, the dielectric constant was observed to decrease with decreasing film thickness. The...
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