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BaTi 4 O 9 thin films have been prepared by RF magnetron sputtering on the Pt/Ti/SiO 2 /Si substrates and the dielectric properties of the BaTi 4 O 9 film have been investigated at microwave frequency range. The homogeneous BaTi 4 O 9 thin film was obtained when the film was grown at 550°C and rapid thermal annealed (RTA) at 900°C for 3min. The...
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