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A lossy substrate model for accurate simulation of extrinsic noise and a lossy substrate de-embedding method for precise extraction of intrinsic noise have been proven by 80 nm, super-100 GHz fT RF nMOS. The method is further applied to 65 nm 160-GHz fT nMOS to investigate aggressive gate length scaling effect on RF noise. The extrinsic noise reveals abnormally weak dependence on gate length scaling...
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