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In this article, we present a physics‐based model to explain the effect of the GaN cap layers on the 2D electron gas density and the bare surface barrier height in AlGaN/GaN heterostructures. We consider that the 2DEG originates from the surface donor states present on the GaN cap top surface. The influence of a 2D hole gas, formed when the valence band crosses the Fermi energy level, has also been...
It is well known that a two-dimensional electron gas (2DEG) exists at the MgZnO/ZnO interface. Both the formation mechanism and the origin of this 2DEG is of immense interest. The origin has been attributed to the polarization charge present coupled with the donor-like surface states on the MgZnO surface. In this paper, a physics-based model is described to explain the 2DEG as well as the bare surface...
GaN/AlGaN/GaN based normally-off high electron mobility transistors (HEMTs) are promising candidates for future high-power as well as high-frequency applications. Here, a physics-based analytical model is presented to explain the effect of a thick GaN cap layer on the two-dimensional electron gas (2DEG) density at the AlGaN/GaN interface, and the surface barrier height in a AlGaN/GaN heterostructure...
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